钛酸锶(SrTiO3)铝酸镧(LaAlO3) wafer
WaferHome can manufacture 钛酸锶(SrTiO3)铝酸镧(LaAlO3)晶体 Wafer
Specification for 钛酸锶(SrTiO3)铝酸镧(LaAlO3) wafer
Grade(等级) | Dimeter(直径) | Type/dopant(类型/掺杂) |
Orientaion |
crystal struction | dielectric constant | coefficient of thermal expansion | Resistivity(电阻率) | dopant element concentration | Flat |
Surface/Roughness(表面粗糙度) | Geometric parameter |
---|---|---|---|---|---|---|---|---|---|---|---|
钛酸锶晶体(SrTiO3) wafer | 25.4mm 50.8mm |
intrinsic | <100><111> |
hexagonal tetragonal | 300 | 10.4×10 -6/℃ | N/A 16mm 22.5mm | polished/etched polished/polished | TTV < 5um TIR <3um STIR < 2um BOW < 10um Warp < 20um | ||
钛酸锶晶体(SrTiO3) wafer | 25.4mm 50.8mm |
铌(Nb) | <100><111> |
hexagonal tetragonal | 300 | 10.4×10 -6/℃ | 0.0035 - 0.08ohm-cm | 1% - 0.1% | N/A 16mm 22.5mm | polished/etched polished/polished | TTV < 5um TIR <3um STIR < 2um BOW < 10um Warp < 20um |
钛酸锶晶体(SrTiO3) wafer | 25.4mm 50.8mm |
钕(Nd) | <100><111> |
hexagonal tetragonal | 300 | 10.4×10 -6/℃ | 0.0035 - 0.08ohm-cm | 1% - 0.1% | N/A 16mm 22.5mm | polished/etched polished/polished | TTV < 5um TIR <3um STIR < 2um BOW < 10um Warp < 20um |
钛酸锶晶体(SrTiO3) wafer | 25.4mm 50.8mm |
Fe | <100><111> |
hexagonal tetragonal | 300 | 10.4×10 -6/℃ | 0.0035 - 0.08ohm-cm | 1% - 0.1% | N/A 16mm 22.5mm | polished/etched polished/polished | TTV < 5um TIR <3um STIR < 2um BOW < 10um Warp < 20um |
铝酸镧(LaAlO3)wafer | 25.4mm 50.8mm | intrinsic/Mg/Fe | <100><111> | hexagona tetragonal | 21 | 9.4x10-6 |
0.9 - 9 *E11 ohm-cm | 1.0*E11 - 9.9 *E19 ohm-cm |
N/A 16mm 22.5mm | polished/etched polished/polished | TTV < 5um TIR <3um STIR < 2um BOW < 10um Warp < 20um |